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2SD789
Silicon NPN Epitaxial
REJ03G0772-0300 (Previous ADE-208-1140A) Rev.3.00 Aug.10.2005
Application
* Low frequency power amplifier * Complementary pair with 2SB740
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 100 50 6 1 0.9 150 -55 to +150 Unit V V V A W C C
Rev.3.00 Aug 10, 2005 page 1 of 5
2SD789
Electrical Characteristics
(Ta = 25C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SD789 is grouped by hFE as follows. C D E 160 to 320 250 to 500 400 to 800 Min 100 50 6 -- -- 160 -- -- -- Typ -- -- -- -- -- -- -- 100 20 Max -- -- -- 1 0.2 800 0.3 -- -- Unit V V V A A V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1A IC = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1MHz
Rev.3.00 Aug 10, 2005 page 2 of 5
2SD789
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (W)
1.2 100
Typical Output Characteristics
0.35
Collector Current IC (mA)
0.3
80
0.25
60
0.8
0.2 0.15
40
0.4
0.1
20
0.05 mA
IB = 0
0
50
100
150
0
2
4
6
8
10
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
2.0
Typical Transfer Characteristics
1,000
40
Collector Current IC (mA)
Collector Current IC (A)
1.6
35 30 25 20
15
10
300 100 30 10 3 1
VCE = 2 V
1.2
0.8
5 mA PC = 0.9 W
0.4 IB = 0 0 0.4 0.8 1.2 1.6 2.0
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
10,000
Base to Emitter Voltage VBE (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
Saturation Voltage vs. Collector Current
1.0 VBE(sat) 0.3
DC Current Transfer Ratio hFE
3,000 1,000 300 100 30 10 1 3 10 30
Pulse VCE = 2 V
0.1
0.03
VCE(sat) Pulse IC = 10 IB
100
300
1,000
0.01 10
30
100
300
1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 5
2SD789
Collector Output Capacitance vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
300 100 30 10 3 1.0 0.3 0.3 f = 1 MHz IE = 0
1.0
3
10
30
100
300
Collector to Base Voltage VCB (V)
Rev.3.00 Aug 10, 2005 page 4 of 5
2SD789
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name TO-92 Mod / TO-92 ModV
MASS[Typ.] 0.35g
Unit: mm
4.8 0.4
3.8 0.4
0.65 0.1 0.75 Max 0.55 Max 0.60 Max
2.3 Max 0.7
10.1 Min
8.0 0.5
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SD789CTZ-E 2SD789DTZ-E 2SD789ETZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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